Epitaxial ZnS thin films grown by single source chemical vapor deposition
Article Abstract:
The use of single source chemical vapor deposition for growing epitaxial ZnS thin films is described. The study shows that this technqiue is relatively easy to use in the production of epitaxtial II-IV semiconductor thin films.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2000
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Structure-evolution in chemical vapor-deposited ZnS films
Article Abstract:
The evolution of crystallographic structure of ZnS films grown on Si(100) wafers by the single-source chemical vapor deposition (CVD) of zinc dimethyldithiocarbamate precursor was examined. The orientation of the crystalline occurred at a much earlier stage in film growth compared to theoretical prediction for evaporative deposited films, suggesting that the presence of impurities during chemical vapor deposition influenced the structural evolution of the film.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2003
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Structural order of nanocrystalline ZnO films
Article Abstract:
Long- and short-range structural order of nanocrystalline ZnO films grown by single source chemical vapor deposition of basic zinc acetate Zn4O(CH3COO)6 were studied. Transmission electron microscopy, X-ray diffraction and electron spectroscopy measurements were utilized to examine the structure of the film grains and to elucidate on the observed relationship between impurity concentration and size of the film crystallites. Findings showed that the orientation of the crystallites is dependent on the atomic short-range structural characteristics.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1999
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