Growth, structure, and stability of ceria films on Si(111) and the application of CaF2 buffer layers

Article Abstract:

The growth of ceria (CeO2) films by oxidation of evaporated Ce metal on Si(111) and on CaF2(111) epilayers on Si(111) is compared. Demonstrations reveal that the application of a CaF2 buffer layer between the ceria and Si substrate prevents the formation of an amorphous oxidized Si layer at the interface and permits the growth of a well-defined epitaxial ceria layer of (111) surface orientation.

Cerium & Compounds, Cerium, Fluorspar

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Selective growth of Ag nanowires on Si(111) surfaces by electroless deposition

Article Abstract:

Electroless deposition of Ag on atomically flat H-terminated Si(111) surfaces in aqueous alkaline solution is found to produces two different sizes of Ag nanowires. One is a narrow Ag nanowire 10 nm in width and 0.5 nm in height, and another is a wide Ag(111) nanowire 35 nm in width and 11 nm in height.

Primary nonferrous metals, not elsewhere classified, Primary Smelting and Refining of Nonferrous Metal (except Copper and Aluminum), Silver, Analysis, Structure, Electrolysis, Electrolysis (Chemistry), Electroless plating

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