Photoinduced ultrafast dynamics of coumarin 343 sensitized p-type-nanostructured NiO films
Article Abstract:
The photoinduced electron transfer from a nanostructured wide band-gap p-type semiconductor, NiO, to an excited bound dye, coumarin 343, and the subsequent recombination are measured. It is found that both processes are nonexponential and the photoinduced electron transfer from the semiconductor to the excited bound dye has an ultrafast components, which is comparable to the time constants measured for photoinduced electron injection in C343-TiO2 colloid solutions.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
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Sensitized hole injection of phosphorus porphyrin into NiO: Toward new photovoltaic devices
Article Abstract:
The preparation and the characterization of a photovoltaic cell based on the sensitization of a wide band gap p-type semiconductor (NiO) with a phosphorus porphyrin are described. A photophysical study with femtosecond transient absorption spectroscopy showed that light excitation of the phosphorus prophyin chemisorbed on NiO particles induces a very rapid interfacial hole injection into the valence band of NiO, occurring mainly on the 2-20 ps time scale.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
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Spectroelectrochemistry of nanostructured NiO
Article Abstract:
Heating Ni(OH) (sub 2) sol-gel films does preparation of transparent nanostructured NiO electrodes. Following various processes, nanostructured NiO promises to be a material for electrochromic devices and electrochemical capacitors.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2001
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