DRAM makers caught in 300mm noose
Article Abstract:
DRAM makers are moving towards production using 300mm wafers although there is some hesitancy towards the transition, partly driven by the high cost of making production changes. Some manufacturers are considering producing 128Mb DRAMs as a half-step until 300mm wafers can be used to efficiently produce 256Mb memories. Micron Technology is weighing whether to produce a 128Mb DRAM device while Samsung Electronics is planning to introduce a 128Mb synchronous DRAM in the 1998 first quarter. However Toshiba America Electronic Components has indicated that they are planning a 256Mb DRAM for the second half of 1998 and will skip the development of 128Mb DRAMs. Texas Instruments is exploring 300mm wafer production while Fujitsu and Intel have announced planned 300-mm wafer product lines.
Publication Name: Electronic Business Today
Subject: Electronics and electrical industries
ISSN: 1085-8288
Year: 1997
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Wafer fabs: Getting more bang for the buck
Article Abstract:
Semiconductor fab plants now cost in excess of a billion dollars to build. Consequently, chip makers and vendors are trying hard to get the most out of existing fab hardware. Manufacturers want to figure out ways to better utilize existing equipment, and also to improve the flow of wafers through the plant. In many fabs, tools operate at full speed only 30 percent of the time. Some simple strategies, such as better scheduling and maintenance, can produce immediate gains. One of the biggest challenges is cutting down on the high amount of setup time required in the steppers. If wafers were to be run continuously, instead of on a stop-start mode, efficiency could instantly improve because the system would have to be set up fewer times.
Publication Name: Electronic Business Today
Subject: Electronics and electrical industries
ISSN: 1085-8288
Year: 1996
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