Surface emitting lasers open new roads
Article Abstract:
Vertical cavity surface emitting lasers (VCSELs) allow the use of standard semicondutor processing techniques and testing because their laser outputs are perpendicular to the surface. Circular, low divergent output beams open a wide range of applications from photoelectronic sensors and laser pointers to high-speed data communications transceivers. VCSELs are already used in serial fiber transceivers such as gigabit ethernet, fiber channel and asynchronous transfer mode (ATM) applications, where the capability of the high-speed, miniature modulators are fully realized.
Comment:
Vertical cavity surface emitting lasers allow the use of standard semicondutor processing technique open other new applications
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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Mask repair systems show promise
Article Abstract:
IBM T.J. Watson Research Center and Jerusalem, Israel-based Nanonics Lithography offer two respective techniques for the repair of lithography masks, as alternatives to ion beams and nanosecond pulsed lasers. The IBM approach, which utilizes a femtosecond laser and an imaged aperture for delivering pulses for the mask, is anticipated for repairs to 100 nm design rules. Meanwhile, the Nanonics Lithography system employs micropipettes that function as an atomic force sensor for monitoring surface topography, and can attain edge placement of 50 nm.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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A molecular alternative to CMOS?
Article Abstract:
Researchers at Hewlett-Packard Labs and the University of California in Los Angeles have developed molecular tunneling devices as an alternative to CMOS logic devices. The devices are basically diode logic gates that have exponential current-voltage properties. The molecular switches consist of rotaxenes and a tunneling barrier placed between metal electrodes. Applying voltage across the electrodes results in a current flow through resonant tunneling.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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