Expert opinion: solid-state research for defense systems

Article Abstract:

Significant areas of defense research and development in 1991 included higher performance transistors for microwave integrated circuits (ICs), low-cost silicon MOS radio-frequency transistors, high-temperature superconductivity and new junctions for long-wave infrared sensing. Indium-based heterojunction bipolar transistors and high-electron-mobility transistors are offering operating speeds of 150 GHz and above for microwave ICs. Research is being conducted on using silicon-on-insulator MOS radio-frequency transistors to implement radar, electronics warfare and communications devices to handle frequencies to 10 GHz. Micromechanics are being used to produce devices that offer timing accuracy 10,000 times more exact than crystals. High-temperature superconductivity research resulted in a 10-GHz radio-frequency tuner that operates at 80 K. New types of junctions are making silicon sensitive to long-wave infrared wavelengths. New porous-etching techniques are enabling silicon to emit lasing light.

Integrated circuits, Industrial research, Nanotechnology, Microwaves, Superconducting devices, Research and Development, Future Technologies, Military, Transistor, Superconductive Devices

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Quantum-tailored solid-state devices

Article Abstract:

Band gap engineering uses the difference in energy between semiconductor atoms' valence and conduction electron bands, the 'band gap,' to make devices that utilize the quantum effects that occur in single layers of atoms laid down by new semiconductor crystal growth techniques. A new range of electronic and optical properties enable creation of such devices as multiple surface-emitting semiconductor lasers on an IC, optical filter circuits, very fast p-type field-effect transistors, and avalanche photodiodes. Most devices are made of Gallium Arsenide and other Group II and V element-based compounds. There are three main tools for engineering band gap devices: alloying for varying the chemical composition, juxtaposing materials with different band gaps to create heterojunctions, and creating mechanical strain between crystal layers.

Integrated circuit fabrication, Product introduction, Functional Capabilities, Gallium Arsenide Semiconductor, Semiconductor Preparation, New Technique, State-of-the-Art

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Solid state

Article Abstract:

The semiconductor industry decline continued in 1986. Japan agreed to stop dumping integrated circuits (ICs) and undercutting prices in overseas markets, and both Japan and South Korea made inroads into US markets. Competition in high-speed static RAMs and sales for application-specific ICs both increased, and power ICs were a focal point in the high growth area of digital signal processing. Reducing standard IC operating voltage to three volts became a more prominent issue.

Semiconductor industry, Products, Industry Analysis, Companies, Market, International

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