Silicon carbide in contention

Article Abstract:

A new crystal-growing process is developed which will help in generating large, pure wafers of silicon carbide and thus solve the problem involved in growing silicon-carbide crystals. This method creates the silicon carbide crystals by using the repeated a-face (RAF) growth process, and thus generates crystals that are virtually dislocation free.

All Other Basic Inorganic Chemical Manufacturing, Industrial inorganic chemicals, not elsewhere classified, Silicon Carbide, Silicon carbides

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How come you look so good?

Article Abstract:

The theory of the formation of a solid, from a solution, through the process of crystallization is explained. It is believed that the process of crystallization, which takes just a few seeds to trigger the formation of many more crystals, is very complex.

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Onset of heterogeneous crystal nucleation in colloidal suspensions

Article Abstract:

The rate, at which crystals nucleate, is increased by adding small 'seed' particles to a supersaturated solution. The numerical simulations of colloidal crystallization, seeded by foreign objects are presented.

Crystal growth

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