Oxidation of nitrided Si(100) by gaseous atomic and molecular oxygen

Article Abstract:

The nitridation of Si(100) by ammonia and the subsequent oxidation of the nitrified surface by both gaseous atomic and molecular oxygen were investigated under ultrahigh conditions, using X-ray photoelectron spectroscopy. Nitridation of Si(100) by the thermal decomposition of ammonia resulted in the formation of a subsurface nitride and a decrease in the concentration of surface dangling bond sites.

Nitrogenous Fertilizer Manufacturing, Nitrogenous fertilizers, Ammonia

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Thermal oxidation of porous silicon: study on reaction kinetics

Article Abstract:

Porous silicon samples obtained by dark etching of p plus type silicon wafers are oxidized in dry air, at various temperatures from 200 degree centigrade up to 800 degree centigrade for 1 -20 h durations to determine the kinetics of the reaction. The oxidation shows first order kinetics and is found to be dependent on the porosity of porous silicon membranes.

Dynamics, Dynamics (Mechanics)

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Laser-induced gold deposition on p(super +)-Si form liquid precursors: A study on the reduction of gold ions through competing Dember and Seebeck effects

Article Abstract:

A study is carried out on gold micropatterns that are deposited form aqueous solutions of NaAuCl4 on boron-doped Si(100) surfaces (rho = 1.5 x 10(super -4) ohm m). The results suggests a different mechanism to be responsible for the reduction of gold ions, namely changes in the surface potential of Si caused by the Dember and Seebeck effects.

Primary nonferrous metals, not elsewhere classified, Primary Smelting and Refining of Nonferrous Metal (except Copper and Aluminum), Gold, Analysis, Metal ions, Structure, Electrophoretic deposition

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