Synchrotron photoemission analysis of semiconductor/electrolyte interfaces by the frozen-electrolyte approach: Interaction of HCI in 2-propanol with GaAs(100)
Article Abstract:
An analysis of chemical reactions and formation of surface compounds occurring on the GaAs (100)/frozen-HCl-2-propanol interface is discussed. Using different excitation energies the depth composition of the reaction products has been monitored indicating a tendency of decreasing chlorination numbers and increasing Ga vs As chloride content toward the pristine substrate at each stage of the reaction.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2006
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Sulfur adsorption at GaAs: Role of the adsorbate solvation and reactivity in modification of semiconductor surface electronic structure
Article Abstract:
Density functional theory was used to calculated the global hardness and the local (condensed) softness of the free and monosolvated hydrosulfide-ion HS(super _) in order to carry out an analysis of the solvation effect on the chemical reactivity of the ion and its interaction with GaAs surface.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2001
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New protonated thioborate glasses in the xH2S + (1-x)B2S3 series
Article Abstract:
A new series of anhydrous protonated chalcogenide glasses, xH2S + (1-x)B2S3, analogous to alkali-modified glasses, are prepared, being a method developed to help in the preparation of metathioboric acid. This acid acts as a precursor for protonation in the preparation of thioborate glasses.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2003
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