3-D SOI using epitaxial lateral overgrowth
Article Abstract:
Three-dimensional silicon-on-insulator (3D-SOI) technology involves the fabrication of semiconductor devices in alternating layers of silicon separated by an insulator. Researchers at Purdue University have developed 3-D SOI stack using epitaxial lateral overgrowth (ELO). Using the ELP method, the researchers were able to create device size SOI islands ranging from 150 nm X 150 nm to 20 um x 3000 um. The defect densities of the SOI are lower than those found in current bonded and SIMOX layers.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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2X reduction imaging interferometric lithography
Article Abstract:
Imaging interferometric lithography (IIL) offers arbitrary pattern capabilities as well as high resolution, with 2X imaging demonstrating a 3X improvement in resolution as compared with that of traditional optical lithography. ILL allows for larger off-axis illumination angles for higher spatial frequencies, extending the resolution beyond the optical lithography limits. More research is being conducted to further improve the sub-wavelength resolutions of IIL.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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157 nm lithography moves forward
Article Abstract:
The most important breakthroughs reported during the First International Symposium on 157 nm Lithography were in the development of resists and pellicles. Two suppliers presented positive data identifying a feasible platform, the fundamental chemistry for 157 nm lithography. In the pellicle arena, a soft polymer membrane material looks promising. The reliability, in addition to the transmissivity, also looks positive.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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