350 GHz transitor is world's fastest
Article Abstract:
Researchers at Nippon Denshin Denwa KK have developed a transistor that operates at a record 350 GHz, with a 3 ps gate delay, allowing the creation of digital circuits for telecommunications networks that could run at more than 100 Gb/sec. NTT attained the record speed with an iridium phosphide (InP) high electron mobility transistor (HEMT), which was lattice-matched to an InP substrate, while the transistor itself was fabricated with a 30-nm gate, using a fullerene-incorporated nanocomposite electron beam resist.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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Making sense of the used equipment marketplace
Article Abstract:
The rapid growth of the semiconductor industry and the practice of moving to a new technology node every two to three years has resulted in a growing stockpile of used equipment. How it is sold and acquired depends much on the sopphistication of the seller and the type of equipment. The Internet is the best channel to sell used equipment especially with the emergence of web sites such as assetdepot.com semiconductor-online.com, semisales.com and semiconbay.com.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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