Manufacturing-worthy processes merge DRAM and logic circuitry
Article Abstract:
Several chip manufacturers presented their latest production technology processes for combining memory and logic components on a single device at the IEDM Conference held in Japan in Dec 1998. NEC, through its ULSI Device Development Laboratories located in Sagamihara, Japan, reported on its use of nitrogen and argon cation implantation to produce a reliable chip with a 20% thickness difference between its logic regions and DRAM. IBM presented its embedded DRAM design which produced the best performance for 1.54 V bulk silicon chips.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Electronics industry update
Article Abstract:
Global sales of semiconductor devices posted a 7.1% increase in total value for Jan 1999 from the same period in 1998. Average selling price increased 6.2% in Jan 1999 compared to the same period in 1998, while microprocessor prices recorded a higher increase at 9.2%, also for the given periods in comparison. Random access memory circuits posted the biggest gain with prices rising 50.5% higher in Jan 1999 compared to the year-ago period.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
User Contributions:
Comment about this article or add new information about this topic:
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