Litography news
Article Abstract:
The manufacture of calcium fluoride (CaF2) optical parts, which has shown substantial improvements over the years, continues to be a difficult process. The most common method for growing the lithographic material continues to be the Stockbarger or Bridgeman method where an elevator system gradually lowers the molten form of CaF2 into a region of lower temperature. The material is slowly cooled to room temperature after the crystal has formed, a process that still takes weeks.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Emerging technologies
Article Abstract:
Gallium nitride (GaN) and silicon carbide (SiC) are increasingly being considered by semiconductor manufacturers for their unique attributes. These include the wide bandgap materials' saturated electron drift velocity and high breakdown voltage capacity, characsteristics that makes them ideal materials for switch-mode and high-frequency power devices applications. SiC even has high thermal conduction that increases its appeal to manufacturers.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Next-generation lithography tools: The choices narrow
Article Abstract:
The choice for probable successors to optical lithography was narrowed to SCALPEL and extreme UV (EUV), setting aside X-ray and ion projection lithography (IPL). Recently, a European EUVL research program was created to combine the optics of Carl Zeiss, the synchrotron source technology of Oxford Instruments and ASM Lithography's expertise in equipment development/integration.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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