Manage W-CVD process: effluents to boost uptime
Article Abstract:
Lost production time and the toxicity of the tungsten hexafluoride precursor residue resulting from tungsten chemical vapor deposition (CVD) make frquent pump line cleaning undesirable. The combination of using a heated line and nitrogen curtain solve sthe exhaust line problems related to the tungsten CVD tools. It eliminates the condensation of WOF4 on the exhaust line's inner wall and the formations of high melting point byproducts are dramatically reduced. Potential contacts to the toxic mateirals are also avoided since the maintenance of the exhaust line is virtually eliminated.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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VLSI upgrades to 200 mm, drops Malaysia
Article Abstract:
VLSI Technology Inc of San Jose, CA, started adopting 200 mm capability at its production facility in San Antonio, CA, in a move that should lower production costs through increased output of integrated circuits without the consequetial increase in workers and floor space. The upgraded San Antonio plant is expected to see full production in the 1st quarter of 2000. The move also allows it to abandon a deal with Wafer Technology Malaysia since the San Antonio plan would be able to meet its future product demands.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Comment about this article or add new information about this topic:
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