Advances in SOC fuel growing markets
Article Abstract:
System-on-a-chip (SOC) technologies are becoming popular in a market characterized by an increasing number of complex semiconductor devices and time-to-market pressures. SOC, which is getting a larger share of the market, is expected to triple to $15.7 billion by 2003. The boom in SOC use is based on the concept of reusable IP or virtual components. Tool vendors are developing frameworks that enable the simultaneous integration of different functions such as microprocessors, DRAM and memory.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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New designs in high-current ion implanters
Article Abstract:
A number of R&D groups of the semiconductor industry are testing the production viability of 200 eV implantation systems to replace ion implementation at 10 keV, below 5 keV and below 1 keV. The study is part of the industry's preparation for the next eight to 10 years, which is predicted to use high-current implant equipment for most full-production. When making the equipment design, engineers consider the shrinking geometries of semiconductor devices and the higher number of particles with higher beam currents. Among the new designs in existence are Varian's patented novel mass slit design and rapid thermal annealing.
Comment:
Some R&D groups of semiconductor ind test prodn viability of 200 eV implantation sys
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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MEF in theory and practice
Article Abstract:
The mark error enhancement factor (MEF) is the ratio of the water CD change to the corresponding change in the reticle CD, with a value of 1.0 indicating perfect linearity. As the value of linewidths become significantly smaller than the exposure wavelength, the wafer CD becomes significantly different from the target CD until the process fail entirely. Studies showed that DUV lithography was limited to 170 mm for isolated lines and 300 nm for isolated posts as a result of resist thickness and etch effects.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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