Photronics joins IMEC's optical lithography program
Article Abstract:
IMEC of Leuven, Belgium and Photronics have joined forces to investigate and develop photomask manufacturing technologies and processes for fabricating integrated circuits with features down to and less than 130 nm. The collaboration will particularly concentrate on ascertaining reticle technology demands for utilizing 193 nm lithography to produce 130 nm designs. The agreement, which considers Brookfield, CT-based Photronics as a preferred photomask supplier, will delineate the roles and responsibilities of each instituation as participants in IMEC's Industrial Affiliation Program on Optical Lithography (IAPOL).
Comment:
Links w/ Photronics to study/dvlp photomask mfg methods to produce integrated circuits w/ features down to/less than 130 nm
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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EUV LLC enters development agreement with newly formed U.S. Advanced Lithography
Article Abstract:
United States Advanced Lithography Limited Liability Company (USAL) of San Jose, CA, a company formed by Ultratech Stepper of San Jose, CA, has agreed with the Extreme Ultraviolet Limited Liability Company (EUV LLC) of Santa Clara, CA, to create new EUV lithography equipment. The agreement is the second such deal made by EUV LLC to allow a US-based lithography firm to develop tools through its technology. Sander H. Wilson, Director of EUV LLC business programs, USAL's collaboration is expected to facilitate the development of EUV lithography tools since Ultratech has been a staunch supporter of the technology.
Comment:
Agrees with United States Advanced Lithography to create new EUV lithography equipment
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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Addressing back-end lithography issues
Article Abstract:
Rolla, MO-based company Brewer Science conducted a study to determine the effects of different organic bottom, anti-reflective coatings (BARC) on via fill. Results indicate that low-molecular-weight materials' exposure to BARC considerably improved the fill depth of their dense and isolated holes. Researchers at Brewers also observed that process conditions, material properties and via hole size play important roles on the effects of BARC on via fill.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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