New anatomies for semiconductor wafers
Article Abstract:
Electronics researchers have developed thin-film technology and surface-processing techniques to the point where semiconductor wafers can be created from previously incompatible materials. Economical bulk silicon, attractive for integrated circuit applications due to its mechanical strength, heat dissipation and potential for scaling, can be married to compounds such as gallium arsenide. In this manner, semiconductors with greater potential for optoelectronic applications can be developed. Up to now, the problem has been that the more dissimilar the atomic codes of two materials, the higher the density of performance-marring defects. Gallium arsenide-on-Silicon (GaAs-on-Si) wafers are being studied for their laser, solar cell and photonic as well as general electronic applications. In the future, wafer engineering may create artificial materials, revolutionizing semiconductor material science.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1989
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The 1990s take shape
Article Abstract:
Analog chips with digital control circuitry can protect against power variation and handle diagnostic functions, among other applications. Bipolar and CMOS devices on the same chip will allow very large scale integration in the 1990s. Sea-of-gates application specific IC (ASIC) technology, in which interconnections are overlaid on continuous arrays of gates to route specific circuits, has reached the 100000 gate-count level. Object-oriented design systems are emerging to meet the thousandfold productivity increase per decade demanded by the increased gate counts.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1989
User Contributions:
Comment about this article or add new information about this topic:
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