Trapped fast at the gate
Article Abstract:
An organic thin-film memory transistor that could form backbone of low-cost microelectronics ranging from radio-frequency identification tags to flexible large-area active matrix displays is reported. Such device with flash memory is achieved by introducing a second floating gate to the silicon transistor between the normal control gate which regulates the flow of current through the transistor and the semiconducting substrate.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2007
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Article Abstract:
The study reports room-temperature fabrication and performance of flexible transparent thin-film transistors (TTFTs) fabricated using In-Ga-Zn-O (a-IGZO) as an active n-channel layer. The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm(super 2)V(super -1)s(super -1), which is an order of magnitude larger than for hydrogenated amorphous silicon.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2004
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Nanometre-scale displacement sensing using a single electron transistor
Article Abstract:
The experimental realization of a device, yielding unequalled displacement sensitivity for a 116-MHz mechanical oscillator at a temperature of 30 mK is presented. It is stated that the device has displacement sensitivity at the 116.7-MHz resonant frequency of the mechanical beam, limited by the noise in the conventional electronics.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2003
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