Influence of surface states on electron transport through intrinsic Ge nanowires
Article Abstract:
Solution-grown single-crystal Ge nanowires were used as conductive channels in field effect transistor devices to study the influence of surface states on their electron transport properties. It was concluded that chemically grown intrinsic Ge nanowires exhibit a p-type field effect, which results from negative surface charges that accumulate on the nanowire surface in interband trap levels associated with surface oxide species.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
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Three-stage multilayer formation kinetics during adsorption of an anionic fluorinated surfactant onto germanium. 1. Concentration effect
Article Abstract:
A study is performed on the adsorption of tetrathylammonium perflurooctylsulfonate (TEA-FOS) from aqueous solutions onto hydroxylated germanium using in situ polarized attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The adsorption was monitored by a series of bulk solution concentrations spanning from well below to above the critical micelle concentration (CMC; 1.0mM).
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2006
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Photochemical generation of electrons and holes in germanium-containing ITQ-17 zeolite
Article Abstract:
A laser flash photolysis study of the pristine ITQ-17 germanosilicate is reported in which upon photoexcitation an enhanced tendency to undergo charge separation, with the generation of electrons and holes decaying in the submillisecond time scale. The behavior was not observed under the same conditions in analogous zeolites lacking germanium atoms.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
User Contributions:
Comment about this article or add new information about this topic:
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