Stability of radicals in aryl-substituted polysilanes with linear and planar silicon skeleton structures
Article Abstract:
The stability of silyl radicals in solid-state poly(methylphenylsilane) (PMPS), PMPS containing structural defects and poly(phenylsilane) (PPS) with a silicon skeleton network has been studied. PMPS and phenyl-substituted PPS were subjected to 60Co gamma rays in the solid state. Results indicate that neutral silyl radicals in solid aryl-substituted polysilanes were found to be weaker than radicals obtained from dimethyl-substituted polysilanes. The radicals are stabilized by the defect in the silicon skeleton and the highly-branched silyl radicals have excellent stability.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Fabrication of nanowires using high-energy ion beams
Article Abstract:
Nanowire formation in Si-based polymer thin films using a heavy ion beam is discussed in terms of energy density deposition along ion tracks. Gelation of the polymer along the ion track results in cross-linking to produce nanowires with size and number density controllable by selecting appropriate ion beam characteristics and polymer materials
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2004
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