The potential distribution at the semiconductor/solution interface
Article Abstract:
The potential distribution at the semiconductor/solution interface under weak depletion and accumulation conditions were investigated. The applied potential is partitioned between the space charge layer in the semiconductor and the Helmholtz layer on the solution side of the interface. Under deep depletion conditions, a change in the applied potential usually appears across the space charge layer and the band bending can be determined using the Mott-Schottky relation. Under conditions of weak depletion, determination of band bending is not straightforward.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 1998
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Synthesis of ZnO nanoparticles in 2-propanol by reaction with water
Article Abstract:
The synthesis of ZnO particles from Zn(CH3Co2) in 2-propanol as a function of the concentration of water is reported. Particles with diameters of 3-5 nm are formed depending on time, temperature, and water concentration.
Publication Name: Journal of Physical Chemistry B
Subject: Chemicals, plastics and rubber industries
ISSN: 1520-6106
Year: 2005
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