Gate oxide uniformity key to high reliability
Article Abstract:
AT and T Bell Laboratories Inc of Murray Hill, NH, has reported that semiconductor device reliability can be significantly improved by making gate oxide thickness more uniform. Lucent researchers said that 1.6 nm gate oxides could be used in transistors operating at 1.2V and 65 degrees C. The researchers were able to achieve a significantly better value for soft breakdown, with many of the transistors continuing to operate successfuly even after soft breakdown. The oxides were produced with thickness range of 1.53 nm to 1.61 nm.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
User Contributions:
Comment about this article or add new information about this topic:
UV microscopy resolves smaller features
Article Abstract:
Ultraviolet (UV) imaging is allowing optical microscopy to compete with other lithography techniques through the provision of heightened resolution and increased contrast. New UV imaging technologies can allow features as small as 80 nm to be resolved. However, for smaller features, wavelength reduction is already necessary. Meanwhile, improvements in UV and DUV imaging has made UV microscopy a viable alternative in the lithography sector.
Comment:
Ultraviolet imaging allows optical microscopy to compete with other lithography techniques
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
User Contributions:
Comment about this article or add new information about this topic:
- Abstracts: Alliance brings home network closer to reality. As demand grows for FPD TVs, so does market competition
- Abstracts: Wafer level burn-in. Backside emission microscopy pinpoints wafer level defects. IR method characterizes interstitial oxygen in silicon ingots
- Abstracts: 300 mm lithography enters reality. Controlling static charge in spin rinser dryers. The challenges of the copper CMP clean
- Abstracts: Life beyond mix-and-match: controlling sub-0.18 micron overlay errors. 300 mm wafers: implications to fab architecture
- Abstracts: Cold plasma extends trace metal detection capability. Diagnosing latch-up with backside emission microscopy. Characterize low-k and copper films in situ