Intel previews 100 nm transistor
Article Abstract:
Intel Corp has developed a new "very high-performance, low-power" transistor with a gate length of only 100 nm, and can achieve speeds of over 1 GHz in a 16 Mb SRAM learning vehicle. The innovative transistor structure showed a 10% improvement in drive current over the previous- generation NMOS and PMOS transistors, with no change in gate-oxide thickness. The design features implant and anneal optimization, 2 nm physical gate oxide thicknesss, insertion of "notched-poly" process and a switch from titanium silicide to cobalt silicide.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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Toshiba develops environmentally friendly transistor package
Article Abstract:
Toshiba of Tokyo Japan, has developed a transistor package that offers the advantage of being easily recyclable. The package, composed of the thermoplastic polyphenylene sulfide (PPS), offers high heat resistance and low flammability, making it ideal for recycling and package engineering applications. According to Toshiba, the use of PPS does not result in an increase in production costs while also not altering the reliability of the device. Toshiba is planning to use the package initially with power transistors.
Comment:
Develops a transistor package that offers the advantage of being easily recyclable
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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New gas combo improves dielectric etch
Article Abstract:
Researchers at NEC Corp have found out a new combination of gases that is more effective in creating the key radicals and ions used in dielectric etch processes. The mixture consists of CF3I and C3F4, which are used to efficiently create CF2 and CF3 radicals. Controlling the ratio of the mixture changes the amount of radicals. The researchers say the mixture should reduce the problems associated with microloading, low selectivity and etch stop.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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