JMAR awarded $13 million DARPA contract
Article Abstract:
San Diego, CA-based JMAR Technologies has been awarded by the US Army Research Laboratory in Adelphi, MD with a $13-million contract. Sponsored by the Defense Advanced Research Projects Agency, the contract involves the task of advancing further development of its PXS laser plasma X-ray source for advanced semiconductor lithography applications. With a primary mission to produce and deliver a point-source X-ray lithography system that can support production rates of up to 24 units of 300 micrometer wafers wafers per hour, the contract will integrate JMAR Technologies' PXS into a mask-to-wafer alignment system, or aligner/stepper. The two instruments will combine to create a point-source lithography workstation.
Comment:
Gets contract to advance further dvlpmt of PXS laser plasma X-ray source for advanced semiconductor lithography applications
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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Life beyond mix-and-match: controlling sub-0.18 micron overlay errors
Article Abstract:
Semiconductor facilities that utilize 20-30 exposure tools have learned to characterize and quantify lens aberrations such as field rotation, magnification, pincushion and barrel distortions. The problems related to overlay appear to be in control due to technological advances. Mix-and- match static tool matching can compensate for less than 20% of the overlay error budget. However, existing techniques involving static matching are not enough to address the major sources of overlay error in production. New methods that incorporate real-time measurement and compensation should be implemented prior to addressing the demands of sub-0.18 micron design rule lithography.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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