Litography: 0.8 micrometer and beyond
Article Abstract:
Enhanced optical lithography is found out to be capable of reducing image device geometries down to 100 nm. However, reducing image device geometry to such level requires a significant investment due to costs associated to technologies that include optical proximity correction (OPC) and phase shifted masks (PSMs). On the other hand, non-optical alternatives, such as extreme ion beam projection, UV (EUV), SCALPEL and 1X X-ray are also expensive. Reducing imaging to 0.18 micrometer and below is part of efforts geared towards resolving feature sizes beyond the illumination wavelength.
Comment:
Enhanced optical lithography is found out to be capable of reducing image device geometries to 100 nm
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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EHS goes beyond the fab
Article Abstract:
The semiconductor industry's environmental awareness continues to progress as evidenced by advancements in dilute chemistries, recycling and waste management. The main factors to consider are water conservation and the chemicals needed to clean wafer surfaces. Chemicals cannot be reused and the use of purer chemicals requires more raw materials and energy, resulting in more waste. The industry is advised to take a systems approach in assessing environmental impact.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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SOI commes of age
Article Abstract:
Silicon-on-insulator (SOI) can address low-power and high-speed requirements for logic better than other materials. SOI exhibits a 25%-30% better performance that bulk silicon as gate oxides scale below 30 angstrom channel lengths to 100 nm and operating voltages to 1.5 V. International Business Machines Corp will introduce the first mainstream SOI product by launchig its 0.22 um, 500 MHz microprocessor using copper technology by the end of 1999.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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