Process module control for advanced gate dielectrics

Article Abstract:

A study was conducted to examine the optical thicknesss of a film and the electrical performance of the gate dielectric as early in the IC manufacturing process as possible, specially in the area of advanced gate materials. A combined optical and non-contact electrical metrology approach using Quantox, an electrically based non-contact gate dielectric measurement system, and the ASET-F5 spectroscopic ellipsometer was used. Results indicate that a less costly, more rapid, in-line metrology approach can be implemented successfully.

Thick Film Materials, Thick films

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New life for conventional silicon technology?

Article Abstract:

Researchers at the Bell Labs of Lucent Technologies have discovered that conventional silicon chips could reach their performance limits several years later than previously assumed. Due to the extension of the projected intrinsic lifetime of silicon dioxide as an insulating layer, the semiconductor industry will have additional time to develop other insulating layers. Completely new semiconductor technologies will have to be developed if alternative insulating materials are not discovered.

Silicon Chips

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MIT demonstrates 25 nn Gates with chromeless phase-shift masks

Article Abstract:

MIT Lincoln Laboratory researchers have fabricated a 50 nm gate length SOI transistors utilizing available DUV tools and resists through gate-only scaling of the Laboratory's SOI CMOS process. They also showed the use of chromeless phase-shift masks to fabricate 25 nm SOI CMOS polysilicon gates with 248 nm exposures. Dr Michael Fritze, a Lincoln Laboratory staff member, said the development of a chromeless approach viable for actual device fabricatio is making progress.

Silicon Wafers, Semiconductor wafers

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