Magnetic parallel assembly improves 3-D processing

Article Abstract:

A technique in semiconductor manufacturing developed by Dr Chang Liu uses magnetic actuation to position a large array of hinged microstructures in parallel. The technology was developed to fabricate microelectromechanical systems (MEMS) which require high-aspect-ratio, 3-D structures. Magnetic actuation results in improved manufacturability and stability of MEMS structures and enables the realization of new MEMS devices and applications.

Semiconductor Devices

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Multibeam system offers direct-write solution

Article Abstract:

Ion Diagnostics has developed a process for the production of next- generation lithography masks. Its scheme, called multibeam electron lithography system (MELS), uses columns with multiple beams to generate numerous parallel writing beams thereby addressing problems posed by space-charge interactions, thermal loading and low-voltage constraints. The beam-columns in MELS can be as large as the wafer, resulting in a throughput that is independent of wafer size.

Silicon Wafers, Semiconductor wafers

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Vertical MOSFET demonstrates 50 nm gates without lithography

Article Abstract:

Lucent Technologies' Bell Laboratories has developed a vertical MOSFET process that produces high-quality gate oxides through a replacement gate approach. The new vertical replacement gate process forms the gate oxide on single-crystal silicon, instead of growing the gate oxides on the gate itself as in previous vertical MOSFETs. The advantages of the new process become apparent as gate oxide thicknesses approach critical limits.

MOS Field-Effect Transistors, Lucent Technologies Inc., MOSFET (Transistors)

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