Who will gamble at 0.13 micrometer?
Article Abstract:
The first group of semiconductor manufacturers to shift to generating 0.13 micrometer complementary metal oxide (CMOS) devices will amass enormous financial rewards. However, the transition from 0.18 to 0.13 micron devices require various process changes that will take between two to three years to complete. These include modifications of the CMOS transistor structure and scenarios for copper anmd low-k dielectrics.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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Semiconductor economy depends on Asian recovery
Article Abstract:
The downturn in the semiconductor industry is caused by the economic crisis in Asia, according to panelists at the 16th State-of-the-Industry breakfast held in San Francisco, CA on July 14, 1998. Financial reforms, specifically in Japan, is needed to allow the recovery of the industry. The semiconductor industry's recovery is expected to begin with balancing the fab capacity with demand, based on the forecast of economic analyst Jerry Worchel of In-Stat Inc in Scottsdale, AZ
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1998
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Yield test structures accelerate learning
Article Abstract:
Silicon Systems Inc of Santa Cruz, CA, has developed new yield test structures which were included in the reticle sets in the first few products using a 0.08 um BICMOS process. The yield test structures identified two main problems in the process. These are the poly-poly leakage caused by poly stringers and metal 2-metal 2 leakage caused by TiW stringers. The total yield improvement from first silicon testing to full production has been attributed mainly to the corrected problems.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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