Ferroelectrics for nonvolatile RAMs
Article Abstract:
The dynamic and static RAMs which are used for fast-access data storage today may soon be replaced by a non-volatile memory device based on a thin-film ferroelectric capacitor. Such devices would be permanently polarized to store data much as EPROMS and EEPROMS do today. Such information would be safe from power failures and systems crashes, but as quickly accessible as today's fast-access RAM. The thin-film memory devices could be no larger than a single transistor, easy to manufacture, and would not fatigue as quickly as do other nonvolatile semiconductor memories. Many universities and companies are researching possible ferroelectric material for use in the new memory devices and techniques and equipment for their production. The military is funding some of the basic research. The possible applications for nonvolatile read/write memory include non-contact smartcards and solid-state disk subsystems.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1989
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It slices, it fills ... the amazing ion beam!
Article Abstract:
Seiko has developed a focused ion-beam instrument that is proving to have many applications in the semiconductor field. The Seiko SMI8100, developed in the early 1980s, has a focused ion beam that is less than 0.1 micrometer in diameter. The beam has an etching function which can slice a clean cross-section through an integrated chip. The beam is also capable of aiding in failure analysis of VLSI circuits. Another application is micromachining, a procedure which the beam can perform better than electron beams or mechanical tools. In addition, at low intensities the beam can function as a microscope to monitor circuit modification.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1989
User Contributions:
Comment about this article or add new information about this topic:
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