Assembly of submicrometre ferromagnets in gallium arsenide semiconductors
Article Abstract:
The incorporation of submicrometre ferromagnetic structures into a semiconductor such as III-V gallium arsenide forms thin layers of two-dimensional magnetic films. The method described involves implantation of the semiconductor with manganese ions followed by annealing to create a phase separation, after which submicroscopic crystals of GaMn nucleate and develop from the implanted layer. The production of ferromagnetic particles introduces a new material with spin-dependent magnetoelectronic properties.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 1995
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Magnets without metals
Article Abstract:
The reported discovery of a new molecular organic magnet raises hopes that more of such materials could be found. These magnets have a critical temperature of 1.48 degrees Kelvin, are non-conducting and are transparent to visible light. The new magnet is composed of nitroxyl groups containing unpaired electrons. These unpaired electrons spin ferromagnetically and the molecules are packed such that a magnetic moment is present in the entire lattice.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 1993
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Teaching magnets new tricks
Article Abstract:
An external electric field has been used to control magnetism in semiconductors.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2000
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- Abstracts: General observation of n-type field effect behavior in organic semiconductors. Molecular-scale interface engineering for polymer light-emitting diodes
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