Ballastic carbon nanotube field-effect transistors
Article Abstract:
A study is conducted to present that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduce or eliminate the barriers for transport through the valence band of nanotubes. High-performance ballistic nanotube field-effect transistors with zero or slightly negative Schottky barriers are realized.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2003
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Low-voltage organic transistors with an amorphous molecular gate dielectric
Article Abstract:
The manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene) is discussed. Molecular SAMs may even be of interest for advanced silicon transistors where the continued reduction in dielectric thickness leads to ever-greater gate leakage and power dissipation.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2004
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High-performance thin-film transistors using semiconductor nanowires and nanoribbons
Article Abstract:
This article describes a general production method for high-performance thin-film transistors on substrates such as plastics and high-mobility materials employing a low-temperature assembly process.
Publication Name: Nature
Subject: Zoology and wildlife conservation
ISSN: 0028-0836
Year: 2003
User Contributions:
Comment about this article or add new information about this topic:
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