Pocket ion-implantation processes

Article Abstract:

Mitsubishi Electric has developed a new pocket ion-implantation process for fabricating 0.1-micron and subsequent transistors. The process results in selective silicon epitaxial growth that elevates the source-drain structure from the substrate surface. Boron ions are then implanted in the pocket that remains after the side wall has been eliminated. The procedure makes it possible to locate the P-N junction under the source-drain, leading to a lower concentration of boron than with the conventional method.

MOS Field-Effect Transistors, MOSFET (Transistors)

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Process for HFETs

Article Abstract:

Matsushita Electronics Corp researchers have developed a new selective thermal oxidation process for A1-GaN/GaN heterostructure field effect transistors (HFETs). The process has allowed high device isolation andmade possible the development of a device with a breakdown voltage of over 100V. Fabricated AlGaN/GaN HFETs with 1.3 micron gates displayed maximum transconductance of 130mS/mm, maximum drain current of 500mA/mm and pinch off characteristics at hig drain voltage of over 120V.

Gallium Arsenide FETs, Gallium arsenide field effect transistors

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Sales of Japanese chip-making equipment up 60%

Article Abstract:

Sales of Japanese-made semiconductor manufacturing equipment in Nov 2000 increased 60.1% over sales from the same period a year ago. According to the Semiconductor Equipment Assn of Japan, this is the 17th consecutive month that sales exceeded those for the same month in the previous year. In Nov 2000, the intake orders increased 21.8% from Nov 1999. The book-to- bill ratio for Japanese-made chip-making equipment stood at 1.11 in November.

Semiconductor Devices

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