The Gunn effect: puzzling over noise
Article Abstract:
J.B. (Ian) Gunn first noticed what would later be called the Gunn effect, a negative-conductivity effect resulting from a transferred-electron mechanism, on Feb 19, 1962. In the Gunn effect electrons at high energies, behaving like particles of greater mass, decrease the velocity of all electrons. The Gunn diode, a gallium-arsenide device which generates and amplifies microwave power, was developed from this effect. Over four million Gunn diodes are manufactured every year because of their continuing importance to electronics. Gunn was working for IBM research labs at the time of his discovery. The possible uses of the device mentioned in the basic patent of the Gunn diode included triggered oscillators, pulse stretchers, amplifiers, AND gates and OR gates.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1989
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Instrumentation
Article Abstract:
Electronic test equipment became more fully featured, flexible, and easy to use in 1986. Digital oscilloscope bandwidths continued to grow, and offerings ranged from specialized personal computers to highly specialized and expensive precision machines. Fiber optics continued to make its mark in high-end instrumentation, and developments occurred in precision ac metrology, ac voltage calibration, and dc calibration systems during the year.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1987
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A quiet year for microprocessors
Article Abstract:
Motorola Inc introduced the 68030, its next generation 32-built processor, and Intel introduced the 82786, a graphics coprocessor, during 1986. RCA Corp unveiled a reduced instruction set 32-bit processor made of gallium arsenide, and Motorola, National Semiconductor Corp, and Zilog all increased speeds of existing chips during the year.
Publication Name: IEEE Spectrum
Subject: Engineering and manufacturing industries
ISSN: 0018-9235
Year: 1987
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