3-D capability turns CD-SEM into metrology system
Article Abstract:
Applied Materials Inc of Santa Clara, CA, has introduced the first production-worthy CD-SEM system capable of three-dimensional stereoscopic imaging. Named VeraSEM 3-D, the image processing equipment provides CD measurements and a view of the slope and shape of features such as 1:14 high-aspect ratio contact holes and trenches. The system is also capable of imaging sidewall profiles of device features down to 0.1 micron.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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System provides non-invasive, in situ metrology
Article Abstract:
Cambridge Metrology, based in Watertown, MA, is developing a photoconductance decay method which provides fast and accurate measurements for surface chemistry control in wet and dry environments in equipment and semiconductor manufacturing. The development is being supervised by a group of engineers at Massachusetts Institute of Technology. The system is best in measuring minority carrier lifetime in silicon because it features a non-invasive, contactless technique.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 2000
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Integrated metrology moves to real-time, better accuracy
Article Abstract:
Nanometrics of Sunnyvale, CA, is set to unveil at SEMICON Japan a new semiconductor film measurement system that can simultaneously measure thickness, refractive index, extinction coefficient and dielectric dopant concentration. NanoSpec 9000 features three reflectometry techniques: visible, 400-800 nm; FTIR, 2.5-25 micrometers; and DUV, 190-400 nm. By following the trend towards 'supertool' modular architecture, the product is able to make faster and more accurate measurements.
Publication Name: Semiconductor International
Subject: Electronics and electrical industries
ISSN: 0163-3767
Year: 1999
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